MOSFET N-CH 650V 9A DPAK STD10NM65N
The pictures are for reference only
Description:
MOSFET N-CH 650V 9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD10NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23225,Price reference "real-time change" China/Hongkong。 STD10NM65N package/specs, Download STD10NM65N、Datasheet。