MOSFET N-CH 600V 7A D2PAK STB8NM60N
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Description:
MOSFET N-CH 600V 7A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB8NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94779,Price reference "real-time change" China/Hongkong。 STB8NM60N package/specs, Download STB8NM60N、Datasheet。