MOSFET N-CH 600V 4.6A IPAK STD6NM60N-1
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Description:
MOSFET N-CH 600V 4.6A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD6NM60N-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14328,Price reference "real-time change" China/Hongkong。 STD6NM60N-1 package/specs, Download STD6NM60N-1、Datasheet。