MOSFET N-CH 60V 120A I2PAK STI200N6F3
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Description:
MOSFET N-CH 60V 120A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI200N6F3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62631,Price reference "real-time change" China/Hongkong。 STI200N6F3 package/specs, Download STI200N6F3、Datasheet。