MOSFET N-CH 600V 13A I2PAK STI18NM60N
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Description:
MOSFET N-CH 600V 13A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI18NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14338,Price reference "real-time change" China/Hongkong。 STI18NM60N package/specs, Download STI18NM60N、Datasheet。