MOSFET N-CH 620V 3.8A TO220 STP4N62K3
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Description:
MOSFET N-CH 620V 3.8A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP4N62K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19902,Price reference "real-time change" China/Hongkong。 STP4N62K3 package/specs, Download STP4N62K3、Datasheet。