MOSFET N-CH 800V 1A IPAK STD1NK80Z-1
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Description:
MOSFET N-CH 800V 1A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD1NK80Z-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93646,Price reference "real-time change" China/Hongkong。 STD1NK80Z-1 package/specs, Download STD1NK80Z-1、Datasheet。