MOSFET N-CH 600V 19.5A I2PAK STI23NM60ND
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Description:
MOSFET N-CH 600V 19.5A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI23NM60ND(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68051,Price reference "real-time change" China/Hongkong。 STI23NM60ND package/specs, Download STI23NM60ND、Datasheet。