MOSFET N-CH 650V 19A I2PAK STI24NM65N
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Description:
MOSFET N-CH 650V 19A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI24NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62520,Price reference "real-time change" China/Hongkong。 STI24NM65N package/specs, Download STI24NM65N、Datasheet。