MOSFET N-CH 650V 7A I2PAK STI8N65M5
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Description:
MOSFET N-CH 650V 7A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI8N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31639,Price reference "real-time change" China/Hongkong。 STI8N65M5 package/specs, Download STI8N65M5、Datasheet。