MOSFET N-CH 620V 5.5A D2PAK STB6N62K3
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Description:
MOSFET N-CH 620V 5.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB6N62K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64366,Price reference "real-time change" China/Hongkong。 STB6N62K3 package/specs, Download STB6N62K3、Datasheet。