MOSFET N CH 650V 11A I2PAKFP STFI11NM65N
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Description:
MOSFET N CH 650V 11A I2PAKFP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STFI11NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48527,Price reference "real-time change" China/Hongkong。 STFI11NM65N package/specs, Download STFI11NM65N、Datasheet。