MOSFET N-CH 60V 80A DPAK STD80N6F6
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Description:
MOSFET N-CH 60V 80A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
DataSheet
STD80N6F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20287,Price reference "real-time change" China/Hongkong。 STD80N6F6 package/specs, Download STD80N6F6、Datasheet。