MOSFET N-CH 30V 17A 8SOIC STS7N3LLH6
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Description:
MOSFET N-CH 30V 17A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STS7N3LLH6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75393,Price reference "real-time change" China/Hongkong。 STS7N3LLH6 package/specs, Download STS7N3LLH6、Datasheet。