MOSFET N-CH 40V 120A I2PAK STI360N4F6
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Description:
MOSFET N-CH 40V 120A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
DataSheet
STI360N4F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory38982,Price reference "real-time change" China/Hongkong。 STI360N4F6 package/specs, Download STI360N4F6、Datasheet。