MOSFET P-CH 20V 4A POWERFLAT STL4P2UH7
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Description:
MOSFET P-CH 20V 4A POWERFLAT
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STL4P2UH7(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99993,Price reference "real-time change" China/Hongkong。 STL4P2UH7 package/specs, Download STL4P2UH7、Datasheet。