MOSFET N-CH 650V 10A IPAK STU13N65M2
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Description:
MOSFET N-CH 650V 10A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU13N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75755,Price reference "real-time change" China/Hongkong。 STU13N65M2 package/specs, Download STU13N65M2、Datasheet。