MOSFET N-CH 650V 32A I2PAK STI40N65M2
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Description:
MOSFET N-CH 650V 32A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI40N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3322,Price reference "real-time change" China/Hongkong。 STI40N65M2 package/specs, Download STI40N65M2、Datasheet。