MOSFET N-CH 600V 13A D2PAK STB20N60M2-EP
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Description:
MOSFET N-CH 600V 13A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB20N60M2-EP(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30547,Price reference "real-time change" China/Hongkong。 STB20N60M2-EP package/specs, Download STB20N60M2-EP、Datasheet。