MOSFET N-CH 40V 120A H2PAK-2 STH180N4F6-2
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Description:
MOSFET N-CH 40V 120A H2PAK-2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STH180N4F6-2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27418,Price reference "real-time change" China/Hongkong。 STH180N4F6-2 package/specs, Download STH180N4F6-2、Datasheet。