MOSFET N-CH 100V 80A I2PAK STI100N10F7
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Description:
MOSFET N-CH 100V 80A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI100N10F7(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85687,Price reference "real-time change" China/Hongkong。 STI100N10F7 package/specs, Download STI100N10F7、Datasheet。