MOSFET N-CH 650V 11A DPAK STD18N65M2-EP
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Description:
MOSFET N-CH 650V 11A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD18N65M2-EP(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23406,Price reference "real-time change" China/Hongkong。 STD18N65M2-EP package/specs, Download STD18N65M2-EP、Datasheet。