MOSFET P-CH 60V 9.4A DPAK FQD11P06TM
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Description:
MOSFET P-CH 60V 9.4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD11P06TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42407,Price reference "real-time change" China/Hongkong。 FQD11P06TM package/specs, Download FQD11P06TM、Datasheet。