MOSFET N-CH 600V 1A IPAK FQU1N60CTU
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Description:
MOSFET N-CH 600V 1A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU1N60CTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53227,Price reference "real-time change" China/Hongkong。 FQU1N60CTU package/specs, Download FQU1N60CTU、Datasheet。