MOSFET N-CH 100V 10A IPAK FQU13N10LTU
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Description:
MOSFET N-CH 100V 10A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU13N10LTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59353,Price reference "real-time change" China/Hongkong。 FQU13N10LTU package/specs, Download FQU13N10LTU、Datasheet。