MOSFET N-CH 100V 12A TO220-3 RFP12N10L
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Description:
MOSFET N-CH 100V 12A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
RFP12N10L(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72513,Price reference "real-time change" China/Hongkong。 RFP12N10L package/specs, Download RFP12N10L、Datasheet。