MOSFET N-CH 650V 35A D2PAK FCB110N65F
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Description:
MOSFET N-CH 650V 35A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCB110N65F(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71760,Price reference "real-time change" China/Hongkong。 FCB110N65F package/specs, Download FCB110N65F、Datasheet。