SICFET N-CH 900V 118A TO247-3 NTHL020N090SC1
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Description:
SICFET N-CH 900V 118A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHL020N090SC1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15703,Price reference "real-time change" China/Hongkong。 NTHL020N090SC1 package/specs, Download NTHL020N090SC1、Datasheet。