MOSFET N-CH 900V 8A TO220-3 FQP9N90C
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Description:
MOSFET N-CH 900V 8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP9N90C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1777,Price reference "real-time change" China/Hongkong。 FQP9N90C package/specs, Download FQP9N90C、Datasheet。