MOSFET N-CH 600V 10.8A TO220F FCPF11N60NT
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Description:
MOSFET N-CH 600V 10.8A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCPF11N60NT(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68200,Price reference "real-time change" China/Hongkong。 FCPF11N60NT package/specs, Download FCPF11N60NT、Datasheet。