NTHL110N65S3F parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ NTHL110N65S3F

The pictures are for reference only

Brand:

Model:

NTHL110N65S3F

Description:

MOSFET N-CH 650V 30A TO247-3

Stock:

49614

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

30A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

58 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2560 pF @ 400 V

On resistance (maximum) for different Ids and Vgs

110 mΩ @ 15A,10V

Power dissipation (maximum)

240W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 3mA

packing

pipe

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-247-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载NTHL110N65S3F.pdf

NTHL110N65S3F（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49614,Price reference "real-time change" China/Hongkong。 NTHL110N65S3F package/specs, Download NTHL110N65S3F、Datasheet。