MOSFET N-CH 650V 6A IPAK FCU600N65S3R0
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Description:
MOSFET N-CH 650V 6A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCU600N65S3R0(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80667,Price reference "real-time change" China/Hongkong。 FCU600N65S3R0 package/specs, Download FCU600N65S3R0、Datasheet。