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    Home/    Category/    MOSFET/    FCU850N80Z

    MOSFET N-CH 800V 6A IPAK FCU850N80Z

    FCU850N80Z image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FCU850N80Z
    Description:
    MOSFET N-CH 800V 6A IPAK
    Stock:
    21105
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    6A(Tc)
  • Drain source voltage (Vdss)
    800 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    29 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1315 pF @ 100 V
  • On resistance (maximum) for different Ids and Vgs
    850 mΩ @ 3A,10V
  • Power dissipation (maximum)
    75W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4.5V @ 600µA
  • packing
    pipe
  • series
    SuperFET® II
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    I-PAK
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
    • PDFicoDataSheet
    FCU850N80Z（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21105,Price reference "real-time change" China/Hongkong。 FCU850N80Z package/specs, Download FCU850N80Z、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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