POWER MOSFET, N-CHANNEL, SUPERFE NTP165N65S3H
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Description:
POWER MOSFET, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTP165N65S3H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47151,Price reference "real-time change" China/Hongkong。 NTP165N65S3H package/specs, Download NTP165N65S3H、Datasheet。