MOSFET N-CH 30V 8.5A 8SOIC FDS8884
The pictures are for reference only
Description:
MOSFET N-CH 30V 8.5A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS8884(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55074,Price reference "real-time change" China/Hongkong。 FDS8884 package/specs, Download FDS8884、Datasheet。