MOSFET N-CH 800V 1A DPAK FQD1N80TM
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Description:
MOSFET N-CH 800V 1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD1N80TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34309,Price reference "real-time change" China/Hongkong。 FQD1N80TM package/specs, Download FQD1N80TM、Datasheet。