MOSFET P-CH 100V 6.6A IPAK FQU8P10TU
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Description:
MOSFET P-CH 100V 6.6A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU8P10TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5715,Price reference "real-time change" China/Hongkong。 FQU8P10TU package/specs, Download FQU8P10TU、Datasheet。