MOSFET N-CH 600V 3.4A DPAK FDD4N60NZ
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Description:
MOSFET N-CH 600V 3.4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD4N60NZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77789,Price reference "real-time change" China/Hongkong。 FDD4N60NZ package/specs, Download FDD4N60NZ、Datasheet。