MOSFET POWER, N-CHANNEL, SUPERFE NTD600N80S3Z
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Description:
MOSFET POWER, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD600N80S3Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72414,Price reference "real-time change" China/Hongkong。 NTD600N80S3Z package/specs, Download NTD600N80S3Z、Datasheet。