MOSFET P-CH 30V 50A D2PAK MTB50P03HDLT4G
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Description:
MOSFET P-CH 30V 50A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
MTB50P03HDLT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85947,Price reference "real-time change" China/Hongkong。 MTB50P03HDLT4G package/specs, Download MTB50P03HDLT4G、Datasheet。