NVBG020N090SC1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVBG020N090SC1

Description:

SICFET N-CH 900V 9.8A/112A D2PAK

Stock:

32115

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

9.8A(Ta),112A(Tc)

Drain source voltage (Vdss)

900 V

Drive voltage (maximum RdsOn, minimum RdsOn)

15V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

200 nC @ 15 V

Input capacitance at different Vds (Ciss) (maximum)

4415 pF @ 450 V

On resistance (maximum) for different Ids and Vgs

28 mΩ @ 60A,15V

Power dissipation (maximum)

3.7W(Ta),477W(Tc)

Vgs (max)

+19V,-10V

Vgs (th) (maximum) for different Ids

4.3V @ 20mA

packing

TR,CT

series

Automotive, AEC-Q101

technology

SiCFET(silicon carbide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

D2PAK-7

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NVBG020N090SC1.pdf

NVBG020N090SC1（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32115,Price reference "real-time change" China/Hongkong。 NVBG020N090SC1 package/specs, Download NVBG020N090SC1、Datasheet。