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SICFET N-CH 900V 9.8A/112A D2PAK NVBG020N090SC1

NVBG020N090SC1 image
The pictures are for reference only
Brand:
Model:
NVBG020N090SC1
Description:
SICFET N-CH 900V 9.8A/112A D2PAK
Stock:
32115
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    9.8A(Ta),112A(Tc)
  • Drain source voltage (Vdss)
    900 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    15V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    200 nC @ 15 V
  • Input capacitance at different Vds (Ciss) (maximum)
    4415 pF @ 450 V
  • On resistance (maximum) for different Ids and Vgs
    28 mΩ @ 60A,15V
  • Power dissipation (maximum)
    3.7W(Ta),477W(Tc)
  • Vgs (max)
    +19V,-10V
  • Vgs (th) (maximum) for different Ids
    4.3V @ 20mA
  • packing
    TR,CT
  • series
    Automotive, AEC-Q101
  • technology
    SiCFET(silicon carbide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    D2PAK-7
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • PDFicoDataSheet
    NVBG020N090SC1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32115,Price reference "real-time change" China/Hongkong。 NVBG020N090SC1 package/specs, Download NVBG020N090SC1、Datasheet。
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