MOSFET P-CH 200V 2.8A TO220-3 FQP3P20
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Description:
MOSFET P-CH 200V 2.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP3P20(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55363,Price reference "real-time change" China/Hongkong。 FQP3P20 package/specs, Download FQP3P20、Datasheet。