SILICON CARBIDE MOSFET, NCHANNEL NTH4L015N065SC1
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Description:
SILICON CARBIDE MOSFET, NCHANNEL
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTH4L015N065SC1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51011,Price reference "real-time change" China/Hongkong。 NTH4L015N065SC1 package/specs, Download NTH4L015N065SC1、Datasheet。