MOSFET N-CH 800V 10A TO220 FCP650N80Z
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Description:
MOSFET N-CH 800V 10A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCP650N80Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82276,Price reference "real-time change" China/Hongkong。 FCP650N80Z package/specs, Download FCP650N80Z、Datasheet。