MOSFET N-CH 100V 1.7A SOT223-4 FQT7N10TF
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Description:
MOSFET N-CH 100V 1.7A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQT7N10TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76546,Price reference "real-time change" China/Hongkong。 FQT7N10TF package/specs, Download FQT7N10TF、Datasheet。