MOSFET P-CH 20V 3.2A CHIPFET NTHD3101FT1G
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Description:
MOSFET P-CH 20V 3.2A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHD3101FT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6423,Price reference "real-time change" China/Hongkong。 NTHD3101FT1G package/specs, Download NTHD3101FT1G、Datasheet。