MOSFET P-CH 12V 10A 8ECH ECH8308-TL-H
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Description:
MOSFET P-CH 12V 10A 8ECH
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ECH8308-TL-H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78466,Price reference "real-time change" China/Hongkong。 ECH8308-TL-H package/specs, Download ECH8308-TL-H、Datasheet。