MOSFET P-CH 20V 3.95A 8SOIC NVMS5P02R2G
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Description:
MOSFET P-CH 20V 3.95A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMS5P02R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99770,Price reference "real-time change" China/Hongkong。 NVMS5P02R2G package/specs, Download NVMS5P02R2G、Datasheet。