MOSFET N-CH 30V 9A 8SOIC FDS6692A
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Description:
MOSFET N-CH 30V 9A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6692A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36941,Price reference "real-time change" China/Hongkong。 FDS6692A package/specs, Download FDS6692A、Datasheet。