MOSFET N-CH 500V 5.5A DPAK FDD6N50FTM
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Description:
MOSFET N-CH 500V 5.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD6N50FTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96344,Price reference "real-time change" China/Hongkong。 FDD6N50FTM package/specs, Download FDD6N50FTM、Datasheet。